Hydrothermal–galvanic couple synthesis of directionally oriented BaTiO3 thin films on TiN-coated substrates

• Published in: Thin solid films Vol. 542; pp. 108 - 113
• Main Authors: Yang, Chia-Jung, Tsai, Di-You, Chan, Pei-Hsuan, Wu, Chu-Tsun, Lu, Fu-Hsing
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 02.09.2013; Elsevier
• Subjects: Barium titanate; Barium titanates; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Diffraction; Electron back scatter diffraction; Exact sciences and technology; Galvanic couple; Growth from solutions; Growth kinetics; Hydrothermal synthesis; Joining; Materials science; Methods of crystal growth; physics of crystal growth; Physics; Silicon substrates; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thin films; Titanium nitride; X-rays; Thin films; Titanium nitride; Hydrothermal synthesis; Barium titanate; Galvanic couple; Growth kinetics; Barium; Electron backscattering; Growth rate; Electron diffraction; Surface morphology; Barium titanates; XRD; Dissolution; Ferroelectric materials; Crystal growth from solutions
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2013.06.060

BaTiO3 films were synthesized on TiN-coated Si substrate below 100°C by a hydrothermal–galvanic couple technique in barium contained alkaline solutions. X-ray diffraction and electron backscatter diffraction results show that the BaTiO3 thin films were directionally oriented grown on the TiN/Si substrates, i.e., (111) BaTiO3 over (111) TiN. The surface morphologies revealed that BaTiO3 nucleated and grew over the TiN surface with a single layer. From kinetic analyses, the growth rates of BaTiO3 films prepared by the hydrothermal–galvanic couple technique were faster than a hydrothermal method. The galvanic effects were confirmed by investigating the induced currents and energies. The galvanic currents were generated and controlled by both the dissolution of TiN and the formation of BaTiO3. The output electric energies increased rapidly with the reaction time and leveled off at the full coverage of BaTiO3. •Cubic BaTiO3 films are synthesized by a hydrothermal–galvanic couple method (HT–GC).•Growth rates of BaTiO3 films made by HT–GC are faster than a hydrothermal method.•BaTiO3 films are directionally oriented grown on the TiN/Si substrates.•Galvanic currents are controlled by dissolution of TiN and formation of BaTiO3.