Nanoscale Capacitance–Voltage Characterization of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

A simple technique for quantitative nanoscale capacitance–voltage ( C – V ) measurements has been developed and used to characterize the two-dimensional electron gas (2DEG) at the interface of AlGaN/GaN heterostructures. The measurements indicate change in confinement of the 2DEG at the AlGaN/GaN in...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 44; no. 10L; p. L1348
Main Authors Koley, G., Lakshmanan, L., Tipirneni, N., Gaevski, M., Koudymov, A., Simin, G., Cha, Ho-Young, Spencer, M. G., Khan, A.
Format Journal Article
LanguageEnglish
Published 01.01.2005
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Summary:A simple technique for quantitative nanoscale capacitance–voltage ( C – V ) measurements has been developed and used to characterize the two-dimensional electron gas (2DEG) at the interface of AlGaN/GaN heterostructures. The measurements indicate change in confinement of the 2DEG at the AlGaN/GaN interface depending on the direction of the dc voltage sweep during C – V measurements, indicating surface state charging and discharging. Under UV illumination, the 2DEG increased significantly as inferred from the increase in threshold voltage of the nanoscale C – V scans, while no change in 2DEG confinement was observed.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.L1348