Stripe geometry InP/InGaAsP lasers fabricated with deuteron bombardment

Stripe geometry gain-guided InP/InGaAsP lasers have reproducibly been fabricated with deuteron bombardment. Good electrical isolation was observed in 250-µm-long laser chips, and CW thresholds as low as 105 mA have been achieved.

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 31; no. 6; pp. 841 - 843
Main Authors Schwartz, B., Focht, M.W., Dutta, N.K., Nelson, R.J., Besomi, P.R.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.1984
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Summary:Stripe geometry gain-guided InP/InGaAsP lasers have reproducibly been fabricated with deuteron bombardment. Good electrical isolation was observed in 250-µm-long laser chips, and CW thresholds as low as 105 mA have been achieved.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1984.21618