Stripe geometry InP/InGaAsP lasers fabricated with deuteron bombardment
Stripe geometry gain-guided InP/InGaAsP lasers have reproducibly been fabricated with deuteron bombardment. Good electrical isolation was observed in 250-µm-long laser chips, and CW thresholds as low as 105 mA have been achieved.
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Published in | IEEE transactions on electron devices Vol. 31; no. 6; pp. 841 - 843 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.01.1984
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Online Access | Get full text |
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Summary: | Stripe geometry gain-guided InP/InGaAsP lasers have reproducibly been fabricated with deuteron bombardment. Good electrical isolation was observed in 250-µm-long laser chips, and CW thresholds as low as 105 mA have been achieved. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/T-ED.1984.21618 |