Some aspects of the multi-interface structure for BSF solar cells

Beginning in the early seventies a special kind of multi-interface high-efficiency solar cell has been developed. One of the most important particularities of these devices, that are known as back surface field (BSF) cells, is their L-H homointerface. Several analytical models have been formulated t...

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Bibliographic Details
Published inSolar Energy Materials and Solar Cells Vol. 31; no. 3; pp. 383 - 399
Main Author Kuznicki, Z.T.
Format Book Review Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 1993
Elsevier
Subjects
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
Solar cell
Lifetime
Minority carrier
Electronic properties
Bibliographic survey
Interface
Diffusion length
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Summary:Beginning in the early seventies a special kind of multi-interface high-efficiency solar cell has been developed. One of the most important particularities of these devices, that are known as back surface field (BSF) cells, is their L-H homointerface. Several analytical models have been formulated to explain the role that this interface plays in minority carrier recombination, but its fine electrical structure is normally neglected or limited to Gunn's general approach. In experimental and theoretical approaches a long range interaction between this interface and minority carrier transport properties (much longer than the majority carrier interactions) has been demonstrated. This paper reviews some details of the electrical structure of an aburpt L-H homointerface and tries to explain this phenomenon on the basis of a recent stationary-state description of accumulation layer fractions (which are especially interesting for the exploration of minority carrier recombination mechanisms).
ISSN:0927-0248
1879-3398
DOI:10.1016/0927-0248(93)90132-M