Vectorized Monte Carlo calculation for the transport of ions in amorphous targets

This paper describes the vectorized implantation of a Monte Carlo technique to simulate the transport of energetic ions in amorphous targets. Utilizing the vector processing capabilities of a CRAY-1 computer, we have achieved speed-up factors between three to ten over equivalent scalar implementatio...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 30; no. 9; pp. 1011 - 1017
Main Authors Petersen, W.P., Fichtner, W., Grosse, E.H.
Format Journal Article
LanguageEnglish
Published IEEE 01.09.1983
Subjects
Computational modeling
History
Ion implantation
Ions
Monte Carlo methods
Scattering
Silicon
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Summary:This paper describes the vectorized implantation of a Monte Carlo technique to simulate the transport of energetic ions in amorphous targets. Utilizing the vector processing capabilities of a CRAY-1 computer, we have achieved speed-up factors between three to ten over equivalent scalar implementations. The method has been successfully applied to simulate typical ion-implant conditions in modern silicon device processing.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1983.21255