Plasma-enhanced chemical vapour deposition of silicon nitride from SiCl4, nitrogen and hydrogen on hard metals

• Published in: Journal of materials science Vol. 26; no. 3; pp. 782 - 786
• Main Authors: ENDLER, I, LEONHARDT, A, SCHOÊNHERR, M, WOLF, E
• Format: Journal Article
• Language: English
• Published: Heidelberg Springer 01.02.1991
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Scanning electron microscopy; Temperature; Support; Amorphous state; Experimental study; Order disorder; Coatings; Chemical vapor deposition; Microhardness; Characterization; Thick film; Preparation; Silicon Nitrides; Mass spectrum; Infrared spectrum
• ISSN: 0022-2461; 1573-4803
• DOI: 10.1007/BF03163522

Silicon nitride coatings were deposited on hard metals at 873 and 1173 K by plasma-enhanced chemical vapour deposition operating with an r.f. discharge. The dependence of the coating on the process parameters (deposition temperature and r.f. power) was investigated, in respect of phase composition, impurities in the coatings, metallographic appearance, microhardness, adhesion and layer-substrate interaction. Up to a deposition temperature of 1023 K the coating were amorphous. Above 1023 K the coatings increasingly contained crystalline regions. At 1173 K and an r.f. power above 200 W, the coatings were nearly completely crystalline. 13 refs.