Structural, Electrical, and Optical Properties of Bismuth-doped Zinc-oxide Thin Films Grown by Radio-frequency Magnetron Sputtering

• Published in: Journal of the Korean Physical Society Vol. 72; no. 8; pp. 943 - 946
• Main Authors: Shin, Johngeon, Cho, Shinho
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Physical Society 01.04.2018; Springer Nature B.V; 한국물리학회
• Subjects: Bismuth; Deposition; Diffraction patterns; Electrical properties; Film thickness; Magnetic properties; Magnetron sputtering; Mathematical and Computational Physics; Optical properties; Particle and Nuclear Physics; Physics; Physics and Astronomy; Radio frequency; Sapphire; Substrates; Temperature; Theoretical; Thin films; X-ray diffraction; Zinc oxide; 물리학; II-VI semiconductor; Sputtering; Thin film
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.72.943

The effect of deposition temperature on the structural, optical, and electrical properties of bismuth-doped zinc-oxide (BZO) thin films was studied. The BZO thin films were prepared on sapphire substrates at various deposition temperatures by using radio-frequency magnetron sputtering. X-ray diffraction patterns showed a strong peak due to the (002) planes of Zinc-oxide (ZnO) for all samples, regardless of deposition temperature. As the deposition temperature increased, both the grain size and the film thickness increased. The optical transmittance (~ 80% at ~ 440 nm) increased rapidly with increasing wavelength and approached nearly 99% above the wavelengths of 800 nm. With increasing deposition temperature, both the electron concentration and mobility in the BZO thin films increased whereas the resistivity decreased. These results suggested that the deposition temperature is an important factor in determining the formation of high-quality BZO thin films on sapphire substrates.