Transport properties of GaAs Co-doped H-passivated low-buckled and high-buckled zigzag silicene nanoribbon two probe devices

• Published in: Nanosystems : Physics, Chemistry, Mathematics Vol. 14; no. 4; pp. 438 - 446
• Main Authors: Naqash, A.N., Shah, K.A., Sheikh, J., Kumbhani, B., Andrabi, S.M.A.
• Format: Journal Article
• Language: English
• Published: St. Petersburg St. Petersburg National Research University of Information Technologies, Mechanics and Optics 01.08.2023
• Subjects: Approximation; Arsenic; Arsenides; Density of states; Electrodes; Electrons; Energy gap; Gallium; Gallium arsenide; Nanoribbons; Random access memory; Semiconductors; Silicene; Silicones; Software; Transistors; Transport properties
• ISSN: 2220-8054; 2305-7971
• DOI: 10.17586/2220-8054-2023-14-4-438-446

In this study, we have investigated the transport properties of low bucked (LB) and high buckled (HB) silicene based two probe devices such as l-V characteristics, conductance, transmission spectrum and projected device density of states. Firstly, we have opened a bandgap in both LB and HB zigzag silicene nanoribbon (ZSiNR) by hydrogen passivation and simulated for their transport properties. Further, we have doped the LB and HB ZSiNR structures by gallium (Ga) and arsenide (As) atoms in order to determine their changes in the transport properties. The results show that 4 atom width silicene nanoribbon shows a maximum band gap of 2.76 and 2.72 A for LB-ZSiNR and НВ-ZSiNR, respectively. The 2 atom doped ZSiNR shows good transport characteristics in the voltage range of 0.5 to 1.5 V in comparison with 4 and 6 atom doped models. The obtained results were validated by calculating the transmission spectrum and projected device density of states. It is believed that the modelled devices will find number of futuristic applications in the electronic industry.