Coulomb effects on thermally induced shuttling of spin-polarized electrons

• Published in: Low temperature physics (Woodbury, N.Y.) Vol. 45; no. 9; pp. 1032 - 1040
• Main Authors: Ilinskaya, O. A., Shkop, A. D., Radic, D., Park, H. C., Krive, I. V., Shekhter, R. I., Jonson, M.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01.09.2019
• Subjects: Dependence; Electron spin; Fysik; magnetic exchange interaction; Magnetic fields; nanoelectromechanics; Physical Sciences; Physics; Quantum dots; Single-electron transistors; spin-polarized electrons; Stability; thermally driven single-electron shuttle; thermally driven single-electron shuttle; spin-polarized electrons; magnetic exchange interaction
• ISSN: 1063-777X; 1090-6517
• DOI: 10.1063/1.5121274

A thermally driven single-electron transistor with magnetic leads and a movable central island (a quantum dot) subject to an external magnetic field is considered. The possibility of a mechanical instability caused by magnetic exchange interactions between spin-polarized electrons in this system was studied by the density matrix method. We proved analytically that for noninteracting electrons in the dot there is no such mechanical instability. However, for finite strengths of the Coulomb correlations in the dot we numerically found critical magnetic fields separating regimes of mechanical instability and electron shuttling on the one hand and damped mechanical oscillations on the other. It was shown that thermally induced magnetic shuttling of spin-polarized electrons is a threshold phenomenon, and the dependence of the threshold bias temperature on model parameters was calculated.