The effect of annealing and chemical mechanical polishing on Ge2Sb2Te5 phase change memory

Annealing and chemical mechanical polishing is used to fabricate a Ge2Sb2Te5 phase change memory (PCM) cell with a protruding bottom electrode (PBE) structure. Compared to the conventional flat BE structure, the set and reset voltage values of the PBE cell are reduced from 2.3 to 1.2 V and from 3.5...

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Published inScripta materialia Vol. 60; no. 11; pp. 957 - 959
Main Authors Zhong, Min, Song, Zhitang, Liu, Bo, Chen, Yifeng, Gong, Yuefeng, Rao, Feng, Feng, Songlin, Zhang, Fuxiong, Xiang, Yanghui
Format Journal Article
LanguageEnglish
Published 01.06.2009
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Summary:Annealing and chemical mechanical polishing is used to fabricate a Ge2Sb2Te5 phase change memory (PCM) cell with a protruding bottom electrode (PBE) structure. Compared to the conventional flat BE structure, the set and reset voltage values of the PBE cell are reduced from 2.3 to 1.2 V and from 3.5 to 2.2 V, respectively. The cell endurance is enhanced from 7.5 X 105 to 8.5 X 106. The power consumption problem and cycle endurance issue of the PCM device have been solved.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:1359-6462
DOI:10.1016/j.scriptamat.2009.02.023