Generalized transfer-fields and Langevin forces for hot-carrier fluctuations in semiconductor submicron devices

We present a unifying scheme for the hydrodynamic calculation of electronic noise in semiconductor devices operating under various conditions. In the framework of the Green-function formalism the noise sources corresponding to the Langevin forces originated by single scattering events are included i...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 272; no. 1; pp. 260 - 262
Main Authors Starikov, E, Shiktorov, P, Gružinskis, V, Reggiani, L, Varani, L, Vaissière, J.C, Nougier, J.P, González, T, Mateos, J, Pardo, D
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.12.1999
Elsevier
Subjects
Computational Physics
Condensed Matter
Electronics
Engineering Sciences
Green functions
Hot-carrier noise
Hydrodynamics
Langevin forces
Materials Science
Physics
Hydrodynamics
Hot-carrier noise
Langevin forces
Green functions
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Summary:We present a unifying scheme for the hydrodynamic calculation of electronic noise in semiconductor devices operating under various conditions. In the framework of the Green-function formalism the noise sources corresponding to the Langevin forces originated by single scattering events are included into the equations describing medium properties. The scheme is validated by numerical calculations of the voltage and current noise in submicron n +nn + GaAs structures.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(99)00281-1