Hall-Effect and Photoluminescence Measurements of Oxygen-Related Donors in CZ-Si Crystals
Electronic states of oxygen-related donors in CZ-Si crystals induced by heat treatment at 430°C have been investigated by Hall-effect and photoluminescence measurements. A characteristic change in the ionization energies of such heat-treatment induced oxygen-related donors has been observed, suggest...
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Published in | Japanese Journal of Applied Physics Vol. 19; no. 9; p. L547 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
1980
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Online Access | Get full text |
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Summary: | Electronic states of oxygen-related donors in CZ-Si crystals induced by heat treatment at 430°C have been investigated by Hall-effect and photoluminescence measurements. A characteristic change in the ionization energies of such heat-treatment induced oxygen-related donors has been observed, suggesting the formation of several species of oxygen clusters distributed in CZ-Si crystals. Photoluminescence spectra related to these oxygen-related donors reveal some new features characteristic of the luminescence from excitons localized at impurity pairs or clusters. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.19.L547 |