Hall-Effect and Photoluminescence Measurements of Oxygen-Related Donors in CZ-Si Crystals

Electronic states of oxygen-related donors in CZ-Si crystals induced by heat treatment at 430°C have been investigated by Hall-effect and photoluminescence measurements. A characteristic change in the ionization energies of such heat-treatment induced oxygen-related donors has been observed, suggest...

Full description

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 19; no. 9; p. L547
Main Authors Nakayama, Hiroshi, Katsura, Johji, Nishino, Taneo, Hamakawa, Yoshihiro
Format Journal Article
LanguageEnglish
Published 1980
Online AccessGet full text

Cover

More Information
Summary:Electronic states of oxygen-related donors in CZ-Si crystals induced by heat treatment at 430°C have been investigated by Hall-effect and photoluminescence measurements. A characteristic change in the ionization energies of such heat-treatment induced oxygen-related donors has been observed, suggesting the formation of several species of oxygen clusters distributed in CZ-Si crystals. Photoluminescence spectra related to these oxygen-related donors reveal some new features characteristic of the luminescence from excitons localized at impurity pairs or clusters.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.19.L547