A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology

We report on the world's first back-illuminated 3D-stacked single-photon avalanche diode (SPAD) in 45nm CMOS technology. This SPAD achieves a dark count rate of 55.4cps/μm 2 , a maximum photon detection probability of 31.8% at 600nm, over 5% in the 420-920nm wavelength range, and timing jitter...

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Bibliographic Details
Published in2017 IEEE International Electron Devices Meeting (IEDM) pp. 16.6.1 - 16.6.4
Main Authors Lee, M.-J, Ximenes, A. R., Padmanabhan, P., Wang, T. J., Huang, K. C., Yamashita, Y., Yaung, D. N., Charbon, E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2017
Subjects
CMOS technology
Imaging
Photonics
Sensitivity
Timing jitter
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Summary:We report on the world's first back-illuminated 3D-stacked single-photon avalanche diode (SPAD) in 45nm CMOS technology. This SPAD achieves a dark count rate of 55.4cps/μm 2 , a maximum photon detection probability of 31.8% at 600nm, over 5% in the 420-920nm wavelength range, and timing jitter of 107.7ps at 2.5V excess bias voltage and room temperature. To the best of our knowledge, these are the best results ever reported for any back-illuminated 3D-stacked SPAD technology.
ISSN:2156-017X
DOI:10.1109/IEDM.2017.8268405