Silicon nanocrystal slab optical waveguide by multi-energy ion implantation: Linear and nonlinear optical properties
Silicon nanocrystals (Si-nc) have gained attention in optics and photonics research areas in recent years due to their advanced optical nonlinear properties. However, a nonlinear integrated optical platform that allows the fabrication of photonic devices with different Si-nc composition is yet under...
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Published in | Optics communications Vol. 566; p. 130683 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.09.2024
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | Silicon nanocrystals (Si-nc) have gained attention in optics and photonics research areas in recent years due to their advanced optical nonlinear properties. However, a nonlinear integrated optical platform that allows the fabrication of photonic devices with different Si-nc composition is yet under investigation. In this work, we experimentally demonstrated a nonlinear optical waveguide based on ion implantation that offers advantages in terms of material composition, low propagation losses, and enhanced nonlinear optical properties, such as a high nonlinear refractive index. In this work we present the fabrication of Si-nc containing waveguiding structures, and a study of their linear and nonlinear optical properties. Our nonlinear integrated optical platform presents a two-photon absorption coefficient β = 3.17 × 10−6 cm W−1 and a nonlinear refractive index n2 = 1.19 × 10−10 cm2 W−1, which shows potential applications in all-optical signal processing devices, such as single-photon sources.
•Multi-energy ion-implantation process allows a well controlled fabrication of slab optical waveguides.•Optical devices based on ion implantation process promote efficient photonic materials with well controlled properties.•Multimode behavior and higher confinement values are obtained increasing the core thickness versus the implantation energy.•The third-order nonlinear parameters obtained indicate aninteresting system for all-optical switching devices. |
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ISSN: | 0030-4018 1873-0310 |
DOI: | 10.1016/j.optcom.2024.130683 |