The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress

The physical origin of the Negative Bias Temperature Instability (NBTI) is still under debate. In this work we analyze the single defects constituting NBTI. We introduce a new measurement technique stimulating a charging of these defects. By employing a statistical analysis of many stochastic stimul...

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Bibliographic Details
Published in2010 IEEE International Reliability Physics Symposium pp. 7 - 15
Main Authors Reisinger, H, Grasser, T, Gustin, W, Schlünder, C
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2010
Subjects
AC-stress
Degradation
Measurement techniques
NBTI
Negative bias temperature instability
Niobium compounds
Predictive models
random telegraph noise
recovery
Statistical analysis
Stochastic processes
Stress
Temperature dependence
Titanium compounds
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Summary:The physical origin of the Negative Bias Temperature Instability (NBTI) is still under debate. In this work we analyze the single defects constituting NBTI. We introduce a new measurement technique stimulating a charging of these defects. By employing a statistical analysis of many stochastic stimulation processes of the same defect we are able to determine the electric field and the temperature dependence of these defects with great precision. Based on our experiments we present and verify a new, physics-based, quantitative model allowing a precise prediction of NBTI degradation and recovery. This model takes the stress history into account and also provides a prediction for degradation due to AC-NBTI and an understanding of the special features seen in conjunction with AC-NBTI.
ISBN:1424454301
9781424454303
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2010.5488858