Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates

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Bibliographic Details
Published in	Journal of crystal growth Vol. 453; pp. 180 - 187
Main Authors	Bogumilowicz, Y., Hartmann, J.M., Rochat, N., Salaun, A., Martin, M., Bassani, F., Baron, T., David, S., Bao, X.-Y., Sanchez, E.
Format	Journal Article
Language	English
Published	Elsevier 01.11.2016
Subjects	Physics
Online Access	Get full text

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ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2016.08.022