Significant reduction of crack propagation in the strained SiGe/Ge(111) induced by the local growth on the depth-controlled area patterning

Abstract We propose a method for obtaining crack-free fully-strained SiGe layers on Ge(111). To achieve the crack-free strained SiGe layers, we introduce a patterned area with a sufficient depth (step height) of more than 1 μ m on Ge(111) substrates. Because of the complete suppression of the crack...

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Published inApplied physics express Vol. 16; no. 1; pp. 15502 - 15505
Main Authors Wagatsuma, Youya, Kanesawa, Rena, Alam, Md. Mahfuz, Okada, Kazuya, Inoue, Takahiro, Yamada, Michihiro, Hamaya, Kohei, Sawano, Kentarou
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.01.2023
Subjects
crack formation
SiGe
spintronics
strain
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Summary:Abstract We propose a method for obtaining crack-free fully-strained SiGe layers on Ge(111). To achieve the crack-free strained SiGe layers, we introduce a patterned area with a sufficient depth (step height) of more than 1 μ m on Ge(111) substrates. Because of the complete suppression of the crack propagation from the SiGe layer grown on the outside of the patterned area on Ge(111), we achieve crack-free fully strained SiGe layers on the inside of the patterned area. This approach will drastically expand the applicability of the strained SiGe to the fields of Si photonics and spintronics.
Bibliography:APEX-106865.R1
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/aca751