Effect of microwave power and reactive gas ratio on the properties of silicon nitride thin films deposited by ECR PECVD

Article abstract not included.

Saved in:
Bibliographic Details
Published inJournal of electronic materials Vol. 21; no. 12; pp. 1119 - 1122
Main Authors JEON, Y.-C, LEE, H.-Y, JOO, S.-K
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.12.1992
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Electrical conductivity
Electric breakdown
Voltage current curve
Refraction index
Microwave
Experimental study
Chemical vapor deposition
Inorganic compound
Thin film
Ellipsometry
Preparation
Silicon Nitrides
Plasma deposition
Hydrogen bond
Online AccessGet full text

Cover

More Information
Summary:Article abstract not included.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02667603