Realization of non-polar ZnO (1 1 2̄ 0) homoepitaxial films with atomically smooth surface by molecular beam epitaxy

• Published in: Journal of crystal growth Vol. 325; no. 1; pp. 93 - 95
• Main Authors: Zhang, T.C., Mei, Z.X., Kuznetsov, A.Yu, Du, X.L.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.06.2011; Elsevier
• Subjects: A1. Atomic force microscopy; A1. Non-polar ZnO; A1. Reflection high-energy electron diffraction; A3. Molecular beam epitaxy; Anisotropy; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystal growth; Exact sciences and technology; Materials science; Mean square values; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beam epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Quantum wells; Reflection; Retarding; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of film growth; Thin film structure and morphology; Zinc oxide; A1. Atomic force microscopy; A1. Reflection high-energy electron diffraction; A1. Non-polar ZnO; A3. Molecular beam epitaxy; High-frequency discharges; Homoepitaxy; Atomic force microscopy; diffraction; A1. Reflection high-energy electron; Quantum wells; Roughness; Plasma assisted processing; RHEED; Surface states; Thin films; Anisotropy; High energy; Growth mechanism; Molecular beam epitaxy; Zinc oxide; Strip material; Nanostructured materials
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2011.04.037

A route for realizing non-polar ZnO (1 1 2̄ 0) films with atomically smooth surface is demonstrated by employing rf-plasma assisted molecular beam epitaxy on ZnO bulk substrates. It is found that high growth temperature plays an important role in suppressing the typical striped structure along ZnO [0 0 0 1] direction on non-polar planes. An atomically smooth surface with a root mean square roughness of 0.51 nm that is suitable for fabrication of quantum wells is achieved after solving the growth anisotropy problem, as confirmed by the combined studies of reflection high-energy electron diffraction and atomic force microscopy. ► Homoepitaxial growth of non-polar ZnO (1 1 2 ̄ 0) films by rf-MBE. ► High growth temperature enables the suppression of typical striped structures. ► An atomically smooth surface is achieved after solving the growth anisotropy problem.