Separation of interface and nonuniform oxide traps by the DC current-voltage method

Areally nonuniform distribution of oxide charge gives a significant distortion in the gate capacitance and subthreshold DC drain current versus DC gate voltage characteristics. This distortion prevents a reliable determination of the spatial profile of interface and oxide traps generated when a MOS...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 43; no. 1; pp. 137 - 141
Main Authors Kavalieros, J.T., Chih-Tang Sah
Format Journal Article
LanguageEnglish
Published IEEE 01.01.1996
Subjects
Capacitance
Electron traps
Hot carriers
Laboratories
Lifting equipment
Silicon
Solid state circuits
Stress
Substrate hot electron injection
Threshold voltage
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Summary:Areally nonuniform distribution of oxide charge gives a significant distortion in the gate capacitance and subthreshold DC drain current versus DC gate voltage characteristics. This distortion prevents a reliable determination of the spatial profile of interface and oxide traps generated when a MOS transistor is subjected to channel hot carrier stress. A new procedure is demonstrated which separates the nonuniform oxide charge distribution from interface traps by combining the analysis of two experimental DC characteristics: the subthreshold drain-current and the DC base recombination current versus the gate voltage.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.477604