First Demonstration of WSe2 Based CMOS-SRAM

• Published in: 2018 IEEE International Electron Devices Meeting (IEDM) pp. 22.2.1 - 22.2.4
• Main Authors: Pang, Chin-Sheng, Thakuria, Niharika, Gupta, Sumeet Kumar, Chen, Zhihong
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.12.2018
• Subjects: Field effect transistors; Metals; SRAM cells; Stability analysis; Two dimensional displays; Voltage measurement
• ISSN: 2156-017X
• DOI: 10.1109/IEDM.2018.8614572

In this work, we demonstrate a CMOS static random-access-memory (SRAM) using WSe 2 as a channel material for the first time, providing comprehensive DC analyses for transition metal dichalcogenide (TMD) material-based memory applications. A tri-gate design is adopted for the n-type MOSFET, while an air-stable, oxygen plasma induced doping scheme is introduced to implement the p-type MOSFET. DC measurements of SRAM cells demonstrate a unique dynamic tunability enabled by modulating the n-FET doping level through electrostatically gating the extended source/drain regions. Furthermore, with various read/write assist techniques, SRAM operation at low V_{DD} of 0.8V is achieved. Our low power demonstration and its 2D ultra-thin material nature suggest promising applications of WSe 2 for flexible electronics and Internet of Things (IoT).