Passivation of GaAs surfaces

Exposure to atomic hydrogen lowers the decomposition temp. of GaAs. Simultaneous exposure of GaAs to atomic H and atomic nitrogen > 500 deg C results in a layer rich in GaN. The degree of passivation was monitored by photoluminescence. A fourfold improvement in luminescence efficiency was obtaine...

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Bibliographic Details
Published inJournal of electronic materials Vol. 12; no. 2; pp. 359 - 370
Main Authors PANKOVE, J. I, BERKEYHEISER, J. E, KILPATRICK, S. J, MAGEE, C. W
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.03.1983
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Gallium Arsenides
Semiconductor materials
Photoluminescence
Surface film
High temperature
Quantum yield
Chemical reactivity
Controlled atmosphere
Inorganic compound
Passivation
Surface
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Summary:Exposure to atomic hydrogen lowers the decomposition temp. of GaAs. Simultaneous exposure of GaAs to atomic H and atomic nitrogen > 500 deg C results in a layer rich in GaN. The degree of passivation was monitored by photoluminescence. A fourfold improvement in luminescence efficiency was obtained by nitridization, while a factor-of-ten improvement can be obtained with the more complicated technique of generating an (AlGa)As skin. 11 ref.--AA
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02651137