ESD evaluation of a low voltage triggering SCR (LVTSCR) device submitted to transmission line pulse (TLP) test

For a deeper understanding of protection structures during ESD events, transmission line pulse events are applied and simulated with a two-dimensional (2D) device simulator on the particular case of a 1.2 μm low voltage triggering silicon controlled rectifier. Thanks to measurements and simulated re...

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Bibliographic Details
Published inJournal of electrostatics Vol. 56; no. 3; pp. 281 - 294
Main Authors Guilhaume, A, Galy, P, Chante, J.P, Foucher, B, Bardy, S, Blanc, F
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.10.2002
Elsevier
Subjects
Electric power
Engineering Sciences
ESD
HBM
LVTSCR
Protection
SCR
Thermo-electrical simulation
TLP
Thermo-electrical simulation
HBM
SCR
ESD
TLP
LVTSCR
Protection
thermo-electrical simulation
SD
protection
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Summary:For a deeper understanding of protection structures during ESD events, transmission line pulse events are applied and simulated with a two-dimensional (2D) device simulator on the particular case of a 1.2 μm low voltage triggering silicon controlled rectifier. Thanks to measurements and simulated results, we were able to evaluate the robustness of the structure in terms of ESD. This article also focuses on the different behavior modes of such a device depending on the current level applied to the electrodes.
ISSN:0304-3886
1873-5738
DOI:10.1016/S0304-3886(02)00092-X