Low Variability Resistor–Memristor Circuit Masking the Actual Memristor States
A memristor device is demonstrated that produces uniform and controllable resistance switching by placing fixed resistors in series and in parallel with a memristor. The experiments utilize a Pt/Ta2O5/Ta crosspoint device that yielded a coefficient of variation, or relative standard deviation, less...
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Published in | Advanced electronic materials Vol. 1; no. 6 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.06.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A memristor device is demonstrated that produces uniform and controllable resistance switching by placing fixed resistors in series and in parallel with a memristor. The experiments utilize a Pt/Ta2O5/Ta crosspoint device that yielded a coefficient of variation, or relative standard deviation, less than 0.005 for both low resistance (R
ON) and high resistance (R
OFF) states. |
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ISSN: | 2199-160X 2199-160X |
DOI: | 10.1002/aelm.201500095 |