Low Variability Resistor–Memristor Circuit Masking the Actual Memristor States

A memristor device is demonstrated that produces uniform and controllable resistance switching by placing fixed resistors in series and in parallel with a memristor. The experiments utilize a Pt/Ta2O5/Ta crosspoint device that yielded a coefficient of variation, or relative standard deviation, less...

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Bibliographic Details
Published inAdvanced electronic materials Vol. 1; no. 6
Main Authors Kim, Kyung Min, Yang, J. Joshua, Merced, Emmanuelle, Graves, Catherine, Lam, Sity, Davila, Noraica, Hu, Miao, Ge, Ning, Li, Zhiyong, Williams, R. Stanley, Hwang, Cheol Seong
Format Journal Article
LanguageEnglish
Published 01.06.2015
Subjects
memristor
parallel and serial resistors
resistance switching
uniformity
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Summary:A memristor device is demonstrated that produces uniform and controllable resistance switching by placing fixed resistors in series and in parallel with a memristor. The experiments utilize a Pt/Ta2O5/Ta crosspoint device that yielded a coefficient of variation, or relative standard deviation, less than 0.005 for both low resistance (R ON) and high resistance (R OFF) states.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.201500095