Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

• Published in: Journal of semiconductors Vol. 43; no. 3; pp. 32801 - 76
• Main Authors: Bi, Lan, Yao, Yixu, Jiang, Qimeng, Huang, Sen, Wang, Xinhua, Jin, Hao, Dai, Xinyue, Xu, Zhengyuan, Fan, Jie, Yin, Haibo, Wei, Ke, Liu, Xinyu
• Format: Journal Article
• Language: English
• Published: Chinese Institute of Electronics 01.03.2022; High-Frequency High-Voltage Device and Integrated Circuits R&D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China; Institute of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China%High-Frequency High-Voltage Device and Integrated Circuits R&D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
• Subjects: AlGaN/GaN MIS-HEMTs; capacitance-voltage hysteresis; enhancement-mode; parasitic capacitance; T-shape gate; trapping/de-trapping; AlGaN/GaN MIS-HEMTs; T-shape gate; trapping/de-trapping; capacit-ance-voltage hysteresis; enhancement-mode; parasitic capacitance
• ISSN: 1674-4926; 2058-6140
• DOI: 10.1088/1674-4926/43/3/032801

Abstract Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode (E-mode) GaN-based power device, were investigated by frequency/voltage-dependent capacitance–voltage and inductive-load switching measurements. The overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gate–drain capacitance characteristic curves. Frequency- and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiN x passivation dielectric. Circuit-level double pulse measurement also reveals its impact on switching transition for power switching applications.