Computer simulation of the growth of GaAs nanowhiskers with inhomogeneous crystal structures

A physical model is proposed for the growth of GaAs nanowhiskers (NWs) with inhomogeneous crystal structures during the molecular beam epitaxy. Numerical calculations performed using this model give the temporal variation of the growth rate and the height of NWs and indicate the moments of switching...

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Bibliographic Details
Published inTechnical physics letters Vol. 35; no. 2; pp. 99 - 102
Main Authors Lubov, M. N., Kulikov, D. V., Trushin, Yu. V.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.02.2009
Subjects
Classical and Continuum Physics
Physics
Physics and Astronomy
64.70.Nd
68.70.+w
61.50.Ah
81.10.-h
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Summary:A physical model is proposed for the growth of GaAs nanowhiskers (NWs) with inhomogeneous crystal structures during the molecular beam epitaxy. Numerical calculations performed using this model give the temporal variation of the growth rate and the height of NWs and indicate the moments of switching from one crystal phase to another. The results of calculations coincide with the available experimental data.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785009020011