Generalized guide for MOSFET miniaturization

As MOSFET dimensions are reduced, lower voltages, shallower junctions, thinner oxides, and heavier doping help to maintain long-channel behavior. A simple, empirical relation has been found between these parameters and the minimum channel length for which long-channel subthreshold behavior will be o...

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Bibliographic Details
Published inIEEE electron device letters Vol. 1; no. 1; pp. 2 - 4
Main Authors Brews, J.R., Fichtner, W., Nicollian, E.H., Sze, S.M.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.1980
Subjects
Computer errors
Current measurement
Displays
Doping
Length measurement
MOSFET circuits
Parameter estimation
Testing
Variable structure systems
Voltage
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Summary:As MOSFET dimensions are reduced, lower voltages, shallower junctions, thinner oxides, and heavier doping help to maintain long-channel behavior. A simple, empirical relation has been found between these parameters and the minimum channel length for which long-channel subthreshold behavior will be observed. This approximate relation provides an estimate for MOSFET parameters not requiring reduction of all dimensions by the same scale factor.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1980.25205