Nonequilibrium nucleation: Silicon carbide clusters
Two methods for the formation of silicon carbide clusters are investigated during the fluctuation stage of the first-kind phase transition with the help of computational experiments: (i) vapor condensation during the furnace-induced and plasmochemical formation of silicon carbide and (ii) crystalliz...
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| Published in | Surface investigation, x-ray, synchrotron and neutron techniques Vol. 6; no. 6; pp. 975 - 978 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
Dordrecht
SP MAIK Nauka/Interperiodica
01.11.2012
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| Abstract | Two methods for the formation of silicon carbide clusters are investigated during the fluctuation stage of the first-kind phase transition with the help of computational experiments: (i) vapor condensation during the furnace-induced and plasmochemical formation of silicon carbide and (ii) crystallization of melt islands on the substrate surface via chemical deposition from the gas phase. |
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| AbstractList | Two methods for the formation of silicon carbide clusters are investigated during the fluctuation stage of the first-kind phase transition with the help of computational experiments: (i) vapor condensation during the furnace-induced and plasmochemical formation of silicon carbide and (ii) crystallization of melt islands on the substrate surface via chemical deposition from the gas phase. |
| Author | Zmievskaya, G. I. Zakirov, A. V. Bondareva, A. L. |
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| Keywords | Critical Cluster Size Neutron Technique Silicon Carbide Gibbs Energy Discharge Plasma |
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| References | A. V. Semenov, S. N. Skorik, A. V. Lopin, V. M. Puzikov, V. N. Baumer, and P. V. Mateichenko, Poverkhnost’, No. 7, 58 (2010). ZmievskayaG. I.BondarevaA. L.LevchenkoV. D.LevchenkoT. V.J. Phys. D: Appl. Phys.200740484210.1088/0022-3727/40/16/0131:CAS:528:DC%2BD2sXhtVSms7zM BerzinA. A.MorozovA. I.SigovA. S.Solid State Phys.199638747 BondarevaA. L.LevchenkoT. V.ZmievskayaG. I.Defect and Diffusion Forum, Vols. 297–301: Diffusion in Solids and Liquids V2010SwitzerlandTrans Tech. Publ.502 R. S. Rydanov, G. A. Cherkashin, D. S. Vakalov, O. M. Bairamukov, S. O. Krandievskii, and L. V. Mikhnev, Vestn. Sev.-Kav. Gos. Tekh. Univ., No. 3 (24), 60 (2010). ZmievskayaG. I.Plasma Phys. Rep.199723340 G. I. Zmievskaya, L. V. In’kov, V. D. Levchenko, and T. V. Levchenko, Poverkhnost’, No. 5, 106 (2004). ZmievskayaG. I.PopovYu. P.Encyclopedy of Low-Temperature Plasma, Ser. B Ed. by V.E. Fortov, Vol. 7: Mathematical Simulation in Low-Temperature Plasma2009MoscowYanus-K28 ZmievskayaG. I.BondarevaA. L.J. Surf. Invest.2010483610.1134/S1027451010050265 ZmievskayaG. I.BondarevaA. L.Plasma Phys. Rep.2011378710.1134/S1063780X101210981:CAS:528:DC%2BC3MXhsFGkurg%3D Zin’kovskayaT. V.ZmievskayaG. I.Dokl. Akad. Nauk SSSR1989309301 RolduginV. I.Physical Chemistry of the Surface2008DolgoprudnyiIntellekt G. I. Zmievskaya (6688_CR8) 2009 G. I. Zmievskaya (6688_CR4) 2011; 37 A. A. Berzin (6688_CR9) 1996; 38 T. V. Zin’kovskaya (6688_CR1) 1989; 309 G. I. Zmievskaya (6688_CR2) 1997; 23 6688_CR7 G. I. Zmievskaya (6688_CR6) 2007; 40 6688_CR12 V. I. Roldugin (6688_CR10) 2008 6688_CR11 G. I. Zmievskaya (6688_CR3) 2010; 4 A. L. Bondareva (6688_CR5) 2010 |
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| Title | Nonequilibrium nucleation: Silicon carbide clusters |
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