Nonequilibrium nucleation: Silicon carbide clusters

Two methods for the formation of silicon carbide clusters are investigated during the fluctuation stage of the first-kind phase transition with the help of computational experiments: (i) vapor condensation during the furnace-induced and plasmochemical formation of silicon carbide and (ii) crystalliz...

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Bibliographic Details
Published inSurface investigation, x-ray, synchrotron and neutron techniques Vol. 6; no. 6; pp. 975 - 978
Main Authors Bondareva, A. L., Zmievskaya, G. I., Zakirov, A. V.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.11.2012
Subjects
Chemistry and Materials Science
Materials Science
Surfaces and Interfaces
Thin Films
Critical Cluster Size
Neutron Technique
Silicon Carbide
Gibbs Energy
Discharge Plasma
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Summary:Two methods for the formation of silicon carbide clusters are investigated during the fluctuation stage of the first-kind phase transition with the help of computational experiments: (i) vapor condensation during the furnace-induced and plasmochemical formation of silicon carbide and (ii) crystallization of melt islands on the substrate surface via chemical deposition from the gas phase.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451012120038