Tantalum oxide capacitors for GaAs monolithic integrated circuits

The performance of a high-yield tantalum oxide capacitor for use in GaAs monolithic microwave integrated circuits is described. The integral metal-insulator-metal sandwich structure is reactively sputter-deposited at low temperatures, compatible with a photoresist lift-off process, on semi-insulatin...

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Bibliographic Details
Published inIEEE electron device letters Vol. 3; no. 5; pp. 127 - 129
Main Authors Elta, M.E., Chu, A., Mahoney, L.J., Cerretani, R.T., Courtney, W.E.
Format Journal Article
LanguageEnglish
Published IEEE 01.05.1982
Subjects
Dielectric substrates
Gallium arsenide
Metal-insulator structures
Microwave integrated circuits
MIM capacitors
MMICs
Monolithic integrated circuits
Resists
Sandwich structures
Temperature
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Summary:The performance of a high-yield tantalum oxide capacitor for use in GaAs monolithic microwave integrated circuits is described. The integral metal-insulator-metal sandwich structure is reactively sputter-deposited at low temperatures, compatible with a photoresist lift-off process, on semi-insulating GaAs substrate. Dielectric constants of 20-25 were achieved in the capacitors fabricated. An initial application of this process as an interstage coupling capacitor for a two-stage preamplifier is given.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1982.25508