Bonding, aromaticity, and planar tetracoordinated carbon in Si2CH2 and Ge2CH2
Natural bond orbital (NBO) analyses and dissected nucleus-independent chemical shifts (NICS π z z ) were computed to evaluate the bonding (bond type, electron occupation, hybridization) and aromatic character of the three lowest-lying Si 2 CH 2 ( 1-Si , 2-Si , 3-Si ) and Ge 2 CH 2 ( 1-Ge , 2-Ge , 3-...
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Published in | Journal of molecular modeling Vol. 21; no. 8 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Berlin/Heidelberg
Springer Berlin Heidelberg
01.08.2015
|
Subjects | |
Online Access | Get full text |
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Summary: | Natural bond orbital (NBO) analyses and dissected nucleus-independent chemical shifts (NICS
π
z
z
) were computed to evaluate the bonding (bond type, electron occupation, hybridization) and aromatic character of the three lowest-lying Si
2
CH
2
(
1-Si
,
2-Si
,
3-Si
) and Ge
2
CH
2
(
1-Ge
,
2-Ge
,
3-Ge
) isomers. While their carbon C
3
H
2
analogs favor classical alkene, allene, and alkyne type bonding, these Si and Ge derivatives are more polarizable and can favor “highly electron delocalized”? and “non-classical”? structures. The lowest energy Si
2
CH
2
and Ge
2
CH
2
isomers,
1-Si
and
1-Ge
, exhibit two sets of 3–center 2–electron (3c-2e) bonding; a
π
-3c-2e bond involving the heavy atoms (C–Si–Si and C–Ge–Ge), and a
σ
-3c-2e bond (Si–H–Si, Ge–H–Ge). Both
3-Si
and
3-Ge
exhibit
π
and
σ
-3c-2e bonding involving a planar tetracoordinated carbon (ptC) center. Despite their highly electron delocalized nature, all of the Si
2
CH
2
and Ge
2
CH
2
isomers considered display only modest two
π
electron aromatic character (NICS(0)
π
z
z
=--6.2 to –8.9 ppm, computed at the heavy atom ring center) compared to the cyclic-C
3
H
2
(–13.3 ppm).
Graphical Abstract
The three lowest Si2CH2 and Ge2CH2 isomers. |
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ISSN: | 1610-2940 0948-5023 |
DOI: | 10.1007/s00894-015-2736-8 |