The photosensitivity of amorphous-crystalline silicon heterostructures with an inversion channel

We investigate the effect of the resistivity of crystalline silicon (1.5–40 kΩ cm) and amorphousfilm thickness (200–2000 Å) on the photoelectric properties of (a-Si/c-Si) heterostructures based on high-resistance p -Si. The investigated heterostructures exhibit inversion surface-band bending in crys...

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Bibliographic Details
Published inTechnical physics letters Vol. 40; no. 5; pp. 397 - 400
Main Authors Danishevskii, A. M., Kotina, I. M., Kon’kov, O. I., Terukov, E. I., Tukhkonen, L. M.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.05.2014
Subjects
Classical and Continuum Physics
Physics
Physics and Astronomy
Amorphous Film
Light Probe
Reverse Bias
Technical Physic Letter
Crystal Silicon
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Summary:We investigate the effect of the resistivity of crystalline silicon (1.5–40 kΩ cm) and amorphousfilm thickness (200–2000 Å) on the photoelectric properties of (a-Si/c-Si) heterostructures based on high-resistance p -Si. The investigated heterostructures exhibit inversion surface-band bending in crystalline silicon. The presence of a conducting channel ensures accumulation of nonequilibrium carriers upon illumination of the areas separated from the electrode by distances that exceed by far their diffusion length. The heterostructures exhibit high photosensitivity, including in the UV spectral region. The spectral characteristics of such structures in the visible and near-IR regions are analogous to those of silicon tunnel MIS structures.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785014050071