Preparation and study of stoichiometric ZnO by MOCVD technique

• Published in: Journal of crystal growth Vol. 285; no. 4; pp. 521 - 526
• Main Authors: Wang, Xinsheng, Yang, Tianpeng, Du, Guotong, Liang, Hongwei, Chang, Yuchun, Liu, Weifeng, Xu, Yibin
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.12.2005; Elsevier
• Subjects: A1. Photoluminescence; A1. X-ray diffraction; A1. X-ray photoelectron; A3. Metalorganic molecular beam epitaxy; B1. Zinc compounds; B2. Semiconducting II–VI materials; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Ii-vi semiconductors; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; 78.55.Et; A3. Metalorganic molecular beam epitaxy; 81.05.Dz; B2. Semiconducting II–VI materials; 82.80.Pv; 81.15.Gh; A1. X-ray photoelectron; A1. X-ray diffraction; B1. Zinc compounds; A1. Photoluminescence; Stoichiometry; Inorganic compounds; Electrical conductivity; 81.15.Gh Al. Photoluminescence; Films; Photoluminescence; Crystal growth from vapors; XRD; Bl. Zinc compounds; Al. X-ray photoelectron; B2. Semiconducting II-VI materials; PECVD; Temperature dependence; Transition element compounds; Binary compounds; Experimental study; MOCVD; Preferred orientation; CVD; Zinc oxides; II-VI semiconductors; Wide band gap semiconductors; Al. X-ray diffraction; X-ray photoelectron spectra
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2005.09.002

The effects of growth temperature on the optical and electronics properties of ZnO thin films, grown on n-Si(1 0 0) substrate by plasma-assisted MOCVD, were investigated by X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), photoluminescence (PL), and Hall measurements. The XRD patterns of the samples indicated that the crystallinity of the ZnO films grown in 500 °C was improved. The XPS spectra showed that ZnO films changed from O-rich to Zn-rich after increasing temperature from 400 to 500 °C. Moreover, Hall measurements indicated that the resistivity in 400 °C (>10 4 Ω cm) was higher than that in 500 °C (3.48×10 3 Ω cm). The PL spectrum also showed that the ultraviolet emission peak in 400 °C was stronger than that in 500 °C. These results can possibly help improve the understanding of obtaining highly optical films grown on n-Si(1 0 0) substrates.