Effect of Electron-Acceptor Compounds on the Laser Burning of Photoluminescence of Hybrid Si/SiOx Silicon Nanoparticles

• Published in: Nanotechnologies in Russia Vol. 13; no. 3-4; pp. 141 - 151
• Main Authors: Rybaltovskii, A. O., Zavorotnyi, Yu. S., Ishchenko, A. A., Parshutkin, A. E., Radtsig, V. A., Sviridov, A. P., Feklichev, E. D., Bagratashvili, V. N.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.03.2018
• Subjects: Chemistry and Materials Science; Industrial and Production Engineering; Machines; Manufacturing; Materials Science; Nanophotonics; Nanotechnology; Processes
• ISSN: 1995-0780; 1995-0799
• DOI: 10.1134/S199507801802009X

The role of the environment on the dynamics of the photoburning processes of the red–infrared photoluminescence (PL) of hybrid silicon nanoparticles (npSi/SiO x ) under the influence of continuous laser radiation (410 and 635 nm) in different media (in a helium or oxygen atmosphere at low pressures, in carbon tetrachloride solutions, in polymer matrices, and in vacuum) is studied. It is established that the presence of electron-acceptor molecules or compounds in the components of the medium increases the rate of luminescence photoburning (photosensitivity) of npSi/SiO x . The lowest photosensitivity is observed when the nanoparticles are in vacuum or in a helium atmosphere. It is shown that the photoburning rate depends on the wavelength of the exciting radiation. A mechanism of photosensitivity of npSi/SiO x is proposed which is based on recharging the centers involved in the photoluminescence process and located in the oxide shell or at the core–shell interface.