Superionic conductivity and switching effect with memory in TlInSe2 and TlInTe2 crystals

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 45; no. 11; pp. 1387 - 1390
• Main Authors: Sardarly, R. M., Samedov, O. A., Abdullayev, A. P., Salmanov, F. T., Alekperov, O. Z., Huseynov, E. K., Aliyeva, N. A.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01.11.2011
• Subjects: Diffusion; Magnetic Materials; Magnetism; Nonelectronic Properties of Semiconductors (Atomic Structure; Physics; Physics and Astronomy; Memory Effect; Ionic Conductivity; Electric Field Strength; Superionic Conductivity; Switching Effect
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782611110224

The temperature dependences of the conductivity σ( T ) and the switching and memory effects in one-dimensional TlInSe 2 and TlInTe 2 single crystals have been studied. A specific feature is found in the dependence σ( T ) above 333 K, which is related to the transition of crystals to the state with superionic conductivity. It is suggested that the ion conductivity is caused by the diffusion of Tl + ions over vacancies in the thallium sublattice between (In 3+ Te 2 2− ) − and (In 3+ Se 2 2− ) − nanochains (nanorods). S -type switching and memory effects are revealed in TlInSe 2 and TlInTe 2 crystals, as well as voltage oscillations in the range of negative differential resistance. It is suggested that the switching effect and voltage oscillations are related to the transition of crystals to the superionic state, which is accompanied by “melting” of the Tl sublattice. The effect of electric-field-induced transition of TlInSe 2 and TlInTe 2 crystals to the superionic state is found.