Dynamic characteristics of “low-temperature” gallium arsenide for terahertz-range generators and detectors

The lifetime of free photoexcited carriers in epitaxial films of “low-temperature” gallium arsenide (LT-GaAs) is determined by the pump-probe optical reflection method. The dark resistivity of LT-GaAs layers is estimated. Emission spectra of LT-GaAs photoconductive antennas are measured in the terah...

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Bibliographic Details
Published inBulletin of the Lebedev Physics Institute Vol. 42; no. 5; pp. 121 - 126
Main Authors Gorbatsevich, A. A., Egorkin, V. I., Kazakov, I. P., Klimenko, O. A., Klokov, A. Yu, Mityagin, Yu. A., Murzin, V. N., Savinov, S. A., Tsvetkov, V. A.
Format Journal Article
LanguageEnglish
Published New York Allerton Press 01.05.2015
Subjects
Physics
Physics and Astronomy
low-temperature gallium arsenide
photoexcited carrier lifetime
terahertz radiation
optical pump-probe measurements
photoconductive antennas
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Summary:The lifetime of free photoexcited carriers in epitaxial films of “low-temperature” gallium arsenide (LT-GaAs) is determined by the pump-probe optical reflection method. The dark resistivity of LT-GaAs layers is estimated. Emission spectra of LT-GaAs photoconductive antennas are measured in the terahertz frequency region by the Fourier transform spectroscopy.
ISSN:1068-3356
1934-838X
DOI:10.3103/S1068335615050012