Comparison of different concepts of InAs quantum dot growth on GaAs for 1.3-μm-range lasers

The DWELL (dots-in-a-well), DUWELL (dots-under-the-well), and GC-SRL (gradient-composition-strain-reducing-layer) concepts of InAs quantum dot epitaxial growth under identical conditions have been compared. The laser structures are designed for operation near 1.3 μm. An improved procedure is propose...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 46; no. 11; pp. 1367 - 1371
Main Author Sadofyev, Yu. G.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.11.2012
Subjects
2012
Magnetic Materials
Magnetism
March 12–16
Nizhni Novgorod
Physics
Physics and Astronomy
XVI Symposium “Nanophysics and Nanoelectronics”
Reflection High Energy Electron Diffraction
Indium Arsenide
GaAs
Quantum Well State
Quantum Well
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Summary:The DWELL (dots-in-a-well), DUWELL (dots-under-the-well), and GC-SRL (gradient-composition-strain-reducing-layer) concepts of InAs quantum dot epitaxial growth under identical conditions have been compared. The laser structures are designed for operation near 1.3 μm. An improved procedure is proposed for estimating the InAs growth rate. The dependence of the photoluminescence peak’s spectral position and intensity on the structure type and epitaxy conditions has been studied. A 10-stack DUWELL ridge waveguide laser diode with ground-state lasing at room temperature has been demonstrated.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261211019X