The influence of Fe doping on the surface topography of GaN epitaxial material

Fe doping is an effective method to obtain high resistivity GaN epitaxial material. But in some cases, Fe doping could result in serious deterioration of the GaN material surface topography, which will affect the electrical properties of two dimensional electron gas (2DEG) in HEMT device. In this pa...

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Published inJournal of semiconductors Vol. 36; no. 10; p. 103002
Main Authors Cui, Lei, Yin, Haibo, Jiang, Lijuan, Wang, Quan, Feng, Chun, Xiao, Hongling, Wang, Cuimei, Gong, Jiamin, Zhang, Bo, Li, Baiquan, Wang, Xiaoliang, Wang, Zhanguo
Format Journal Article
LanguageEnglish
Published 01.10.2015
Subjects
Deterioration
Doping
Electrical resistivity
Epitaxial growth
Epitaxy
Gallium nitrides
Semiconductors
Topography
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Summary:Fe doping is an effective method to obtain high resistivity GaN epitaxial material. But in some cases, Fe doping could result in serious deterioration of the GaN material surface topography, which will affect the electrical properties of two dimensional electron gas (2DEG) in HEMT device. In this paper, the influence of Fe doping on the surface topography of GaN epitaxial material is studied. The results of experiments indicate that the surface topography of Fe-doped GaN epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of GaN materials. The GaN material with good surface topography can be manufactured when the Fe doping concentration is 9 x 10 super(19) cm super(-3). High resistivity GaN epitaxial material which is 1 x 10 super(9)[Omega][middot]cm is achieved.
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ISSN:1674-4926
DOI:10.1088/1674-4926/36/10/103002