Effect of parameters of narrow-gap inclusions on the type and intensity of secondary-ion photoeffect in heterophase photosensitive semiconductors

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 43; no. 8; pp. 1064 - 1070
• Main Authors: Stetsyura, S. V., Malyar, I. V., Serdobintsev, A. A., Klimova, S. A.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01.08.2009
• Subjects: Fabrication; Magnetic Materials; Magnetism; Physics; Physics and Astronomy; Testing of Materials and Structures; Treatment; 81.30.Mh; 68.49.Sf; 81.07.Bc; 81.15.Cd; 81.15.Lm; 82.80.Ms
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782609080193

The parameters of narrow-gap PbS precipitates formed as a result of decomposition of a supersaturated CdS and PbS solid solution were determined by the secondaryion mass spectrometry and mathematical simulation with heterophase polycrystalline CdS-PbS film samples prepared by the Langmuir-Blodgett technology. The correlation between the precipitate sizes and the intensity of the secondary-ion photoeffect is found. On the basis of experimental data and simulation results, the explanation for the change in the type of secondary-ion photoeffect with increasing the sputtering depth, which is found for the first time, is suggested. The conclusion is made about the nonlinear dependence of the secondaryion photoeffect on the PbS-precipitate sizes and about the existence of the minimum average precipitate size, at which the effect of narrow-gap PbS inclusions on the type of secondary-ion photoeffect is observed.