Nanostructured graded-index antireflection layer formation on GaN for enhancing light extraction from light-emitting diodes

We describe the fabrication and characterization of a randomly etched gallium nitride (GaN) surface for enhancing light extraction from light-emitting diodes. Our technique uses silica spheres as nano-targets in a sputter-etch process and produces a fine-grained surface with features around 35 nm. T...

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Bibliographic Details
Published inApplied physics. B, Lasers and optics Vol. 107; no. 2; pp. 393 - 399
Main Authors Dylewicz, R., Khokhar, A. Z., Wasielewski, R., Mazur, P., Rahman, F.
Format Journal Article
LanguageEnglish
Published Berlin/Heidelberg Springer-Verlag 01.05.2012
Subjects
Engineering
Lasers
Optical Devices
Optics
Photonics
Physical Chemistry
Physics
Physics and Astronomy
Quantum Optics
Total Internal Reflection
Silica Sphere
Refractive Index Layer
Refractive Index Match
Light Extraction
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Summary:We describe the fabrication and characterization of a randomly etched gallium nitride (GaN) surface for enhancing light extraction from light-emitting diodes. Our technique uses silica spheres as nano-targets in a sputter-etch process and produces a fine-grained surface with features around 35 nm. The textured surface layer acts as a graded refractive index layer with antireflection properties. Measurements show that photoluminescence intensity from such treated surfaces on a GaN LED wafer increases 2.2 times over that from pristine surfaces. These findings are also supported by computer modelling studies described here.
ISSN:0946-2171
1432-0649
DOI:10.1007/s00340-012-5017-6