Electromechanical Fields and Their Influence on the Internal Quantum Efficiency of GaN-Based Light-Emitting Diodes

The effect of electromechanical fields, i.e., polarization fields, on the efficiency droop of GaN-based light-emitting diodes is presented using both experimental and numerical analyses. The role of incorporating such polarization charge density in device performance is numerically investigated and...

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Bibliographic Details
Published inActa mechanica solida Sinica Vol. 31; no. 3; pp. 383 - 390
Main Authors Usman, Muhammad, Saba, Kiran, Jahangir, Adnan, Kamran, Muhammad, Muhammad, Nazeer
Format Journal Article
LanguageEnglish
Published Singapore Springer Singapore 01.06.2018
Subjects
Classical Mechanics
Engineering
Original Paper
Surfaces and Interfaces
Theoretical and Applied Mechanics
Thin Films
Visible and ultraviolet sources
Optoelectronic devices
Light-emitting devices
Photonic bandgap materials
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Summary:The effect of electromechanical fields, i.e., polarization fields, on the efficiency droop of GaN-based light-emitting diodes is presented using both experimental and numerical analyses. The role of incorporating such polarization charge density in device performance is numerically investigated and further compared with the experimental results of internal quantum efficiency of three different devices in consideration.
ISSN:0894-9166
1860-2134
DOI:10.1007/s10338-018-0013-y