A new position-sensitive silicon pixel detector based on bipolar transistors

• Published in: Instruments and experimental techniques (New York) Vol. 52; no. 5; pp. 655 - 664
• Main Authors: Volkov, D. L., Karmanov, D. E., Murashev, V. N., Legotin, S. A., Mukhamedshin, R. A., Chubenko, A. P.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01.09.2009
• Subjects: Electrical Engineering; Measurement Science and Instrumentation; Nuclear Experimental Technique; Physical Chemistry; Physics; Physics and Astronomy; 85.30.De; 29.40.Wk
• ISSN: 0020-4412; 1608-3180
• DOI: 10.1134/S0020441209050042

A new type of detector of ionizing particles and radiations is described. The sensitive region of the detector, which is an array of bipolar transistors, is the collectors of these transistors, in which the primary signal of an ionizing particle is also preamplified. Using circuits of multiemitter transistors, it is very easy to branch the initial signal directly at the detector to several readout buses with equal signal levels in each bus. This possibility allows, in particular, the development of two-coordinate detectors with readout only on one side or detectors with an outputted readout triggering signal (self-triggering systems). Since 2005, several prototypes of such detectors have been produced in Russia. This paper presents their designs, some important elements of the manufacturing process, and the test results.