Cylindrical DC Magnetron Sputtering Assisted by Microwave Plasma

A new magnetron sputtering apparatus assisted by microwave plasma has been developed to achieve high sputter deposition rates at low gas pressures. In this apparatus, a microwave plasma is produced in a cylindrical multipolar magnetron arrangement and utilized for DC magnetron sputtering deposition....

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 38; no. 7S; p. 4326
Main Authors Akira Yonesu, Akira Yonesu, Takashi Kato, Takashi Kato, Hiroki Takemoto, Hiroki Takemoto, Naoki Nishimura, Naoki Nishimura, Yasumasa Yamashiro, Yasumasa Yamashiro
Format Journal Article
LanguageEnglish
Published 01.07.1999
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Summary:A new magnetron sputtering apparatus assisted by microwave plasma has been developed to achieve high sputter deposition rates at low gas pressures. In this apparatus, a microwave plasma is produced in a cylindrical multipolar magnetron arrangement and utilized for DC magnetron sputtering deposition. With the assistance of microwave plasma, operation of the magnetron discharge has been achieved at pressures on the order of 10 -4 Torr. Aluminum films are deposited in this apparatus at rates greater than 50 nm/min even at the low gas pressure of 2.5×10 -4 Torr.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.4326