SIMS study of annealing effect on element distribution in free-standing Al/Si and Zr/ZrSi2 multilayer films

The results of secondary ion mass spectrometry (SIMS) depth profile analysis of free-standing Al/Si and Zr/ZrSi 2 multilayer films by a TOF.SIMS-5 instrument are reported for the first time. A prestudy of elemental composition in Zr and ZrSi 2 single layers and Zr/ZrSi 2 multilayer films deposited o...

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Published inSurface investigation, x-ray, synchrotron and neutron techniques Vol. 4; no. 3; pp. 405 - 410
Main Authors Drozdov, M. N., Drozdov, Yu. N., Kluenkov, E. B., Luchin, V. I., Lopatin, A. Ya, Salashchenko, N. N., Tsybin, N. N., Shmaenok, L. A.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.06.2010
Subjects
Chemistry and Materials Science
Materials Science
Surfaces and Interfaces
Thin Films
Neutron Technique
Free Standing
Multilayer Film
Surface Investigation
Depth Profile
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Summary:The results of secondary ion mass spectrometry (SIMS) depth profile analysis of free-standing Al/Si and Zr/ZrSi 2 multilayer films by a TOF.SIMS-5 instrument are reported for the first time. A prestudy of elemental composition in Zr and ZrSi 2 single layers and Zr/ZrSi 2 multilayer films deposited on Si substrates with sublayers revealed enhanced diffusion of carbon in Zr layers. Ion sputtering and charge neutralization conditions were determined to provide fixed position of free-standing thin films during analysis. An elemental composition of 100-nm-thick Zr/ZrSi 2 multilayer structures with Mo and B 4 C protective layers was measured prior and after laser annealing.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451010030092