Tin Oxide Films Deposited by Ozone-Assisted Thermal Chemical Vapor Deposition

Transparent conductive tin oxide (TO, SnO 2 ) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyltin (TMT) with oxygen and oxygen containing 2.96 to 5.1 mol% O 3 . The properties of TO films have been changed with the gas f...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 38; no. 5R; p. 2917
Main Authors Jeong-Woon Bae, Jeong-Woon Bae, Sang-Woon Lee, Sang-Woon Lee, Kook-Hyun Song, Kook-Hyun Song, Jung-Il Park, Jung-Il Park, Kwang-Ja Park, Kwang-Ja Park, Young-Wook Ko, Young-Wook Ko, Geun-Young Yeom, Geun-Young Yeom
Format Journal Article
LanguageEnglish
Published 01.05.1999
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Summary:Transparent conductive tin oxide (TO, SnO 2 ) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyltin (TMT) with oxygen and oxygen containing 2.96 to 5.1 mol% O 3 . The properties of TO films have been changed with the gas flow rate (oxygen, oxygen containing ozone) and the substrate temperature. The use of oxygen containing ozone instead of pure oxygen reduced substrate temperature significantly and the resistivity while maintaining the same growth rate. The films prepared using ozone showed resistivity ranging from 10 -2 to 10 -3 Ωcm, and ranging mobility from 10.5 to 13.7 cm 2 /Vs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.2917