Absorption Spectral Characteristics of Infrared Radiation in Silicon Dioxide Films for Thermal Radiation Detectors

The absorption spectral characteristics of silicon dioxide films in the IR range (λ = 8–14 µ m) were studied to determine the optimal absorber thickness in the matrix structure of Golay microcells in order to design highly sensitive IR detectors. It is shown that the absorbance spectrum of SiO 2 fil...

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Bibliographic Details
Published inOptoelectronics, instrumentation, and data processing Vol. 55; no. 5; pp. 508 - 512
Main Authors Paulish, A. G., Dmitriev, A. K., Gelfand, A. V., Pyrgaeva, S. M.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.09.2019
Subjects
Analysis and Synthesis of Signals and Images
Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
silicon dioxide
infrared technology
thermal radiation detectors
IR spectroscopy
Golay cell array
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Summary:The absorption spectral characteristics of silicon dioxide films in the IR range (λ = 8–14 µ m) were studied to determine the optimal absorber thickness in the matrix structure of Golay microcells in order to design highly sensitive IR detectors. It is shown that the absorbance spectrum of SiO 2 films deposited by electron-beam evaporation has a multipeak structure in the thickness range up to 2 µ m and differs from the known absorption spectra of bulk silicon dioxide, which is apparently due to rearrangements in the film stoichiometry at the initial stages of film formation. Experiments have shown that the integrated absorption in deposited films in a given spectral range is close to a linear dependence on thickness and an order of magnitude smaller than the value obtained by calculation based on literature data for bulk SiO 2 .
ISSN:8756-6990
1934-7944
DOI:10.3103/S8756699019050145