The inversion layer of subhalf-micrometer n- and p-channel MOSFET's in the temperature range 208-403 K

• Published in: IEEE transactions on electron devices Vol. 40; no. 12; pp. 2318 - 2325
• Main Authors: Wildau, H.-J., Bernt, H., Friedrich, D., Seifert, W., Staudt-Fischbach, P., Wagemann, H.G., Windbracke, W.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.12.1993; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Charge measurement; Current measurement; Electrical resistance measurement; Electronics; Exact sciences and technology; Interface states; Length measurement; MOSFET circuits; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicides; Surface resistance; Temperature distribution; Transistors; X-ray lithography; Measurement; Voltage threshold; Field effect transistor; Semiconductor device; Charge carrier mobility; MOS transistor; Series resistance; Doping profile
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.249481

Minority carrier mobility has been extracted from I-V measurements on N- and PMOS-transistors entirely processed by means of X-ray lithography with effective channel lengths down to 0.35 mu m. The measurements have been performed within the temperature range 208-403 K (-65 degrees C to +130 degrees C). The accuracy of the mobility determination has been investigated, especially with regard to the determination of the effective channel length and the series resistance. The results indicate a significant mobility reduction for short-channel NMOS devices at temperatures below 300 K. A slight increase of the threshold-voltage is observed in the short-channel region. Both effects can be required by an inhomogeneous lateral doping profile within the channel due to standard submicron technology; this has been confirmed by two-dimensional device simulation.< >