Low temperature deposition of silicon nitride by reactive ion-beam sputtering

• Published in: Journal of the Electrochemical Society Vol. 130; no. 3; pp. 638 - 644
• Main Authors: BOUCHIER, D, GAUTHERIN, G, SCHWEBEL, C, BOSSEBŒUF, A, AGIUS, B, RIGO, S
• Format: Journal Article
• Language: English
• Published: Pennington, NJ Electrochemical Society 01.03.1983
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Crystal growth; Rutherford backscattering; Silicon Nitrides; Chemical composition; Reactive sputtering; Experimental study; Low temperature; Inorganic compound; Thin film
• ISSN: 0013-4651; 1945-7111
• DOI: 10.1149/1.2119772

The deposition mechanism of reactive ion beam sputtered silicon nitride was studied. Using RBS analysis, the composition of Si sub x N sub y layers deposited at room temp. has been investigated as a function of different parameters. Irrespective of the nitrogen partial pressure, ranging from 10 exp --4 to 0.2 Pa, the stoichiometry of the film depends only on the sputtering yield of Si in the range 0.4-20 keV. Si sub 3 N sub 4 layers can be obtained at low voltage, but only with a low deposition rate (typically 1 nm/min at the experimental conditions). To obtain Si sub 3 N sub 4 film with higher deposition rates the nitridation of deposited Si, either by introducing in the deposition chamber a highly reactive molecule such as NH sub 3 , or by using electronic bombardment, was increased, which stimulates the adsorption of N on the growing film. 28 ref.--AA