Diffusion-limited growth of oxide precipitates in czochralski silison

The oxide precipitate growth mechanism in Czochralski silicon was investigated, using high-voltage electron microscopy (HVEM). It was found that the precipitate proceeds two-dimensional growth of a square-shaped plate without observable thickening. The precipitate dimensions are proportional to 3 4...

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Bibliographic Details
Published inJournal of crystal growth Vol. 49; no. 4; pp. 749 - 752
Main Authors Wada, Kazumi, Inoue, Naohisa, Kohra, Kazutake
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.08.1980
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Summary:The oxide precipitate growth mechanism in Czochralski silicon was investigated, using high-voltage electron microscopy (HVEM). It was found that the precipitate proceeds two-dimensional growth of a square-shaped plate without observable thickening. The precipitate dimensions are proportional to 3 4 powers of the product of the diffusion coefficient of oxygen in silicon and the annealing duration. It was concluded that the precipitate growth is oxygen diffusion limited in a wide temperature range. Also, the oxygen diffusion coefficient at low temperature was determined, using the Johnson-Mehl equation.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(80)90304-8